![]() Let's plot the best fit equation against the experimental data. NonlinearFit ID, VGS_exp, ID_exp, VGS, output = residualsumofsquares Res ≔ NonlinearFit ID, VGS_exp, ID_exp, VGS, output = parametervalues P1 ≔ plot VGS_exp, ID_exp, style = point : Where K = K'/2, and K' is the SPICE parameter KP. If the device is operating in the saturation region and the channel length modulation factor can be neglected, the drain current, ID, is related to the gate-to-source voltage, VGS, according to the following equation: It assumes that the device is operating in its saturation mode and that the channel length modulation factor may be neglected. This worksheet uses this data to determine the least squares curve fit estimate of the SPICE parameters KP (the transconductance parameter) and VTO (zero-bias threshold voltage). The following data of drain current versus gate-to-source voltage has been obtained for an n-channel enhancement mode MOSFET. Parameter Estimation for an N-Channel Enhancement MOSFET
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